PDTC114EMB315
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- Mfr.Part #
- PDTC114EMB315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA PDTC114EMB - SMALL
- Stock
- 15,492
- In Stock ：
- 15,492
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Transistor Type :
- NPN - Pre-Biased
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 250mW
- Number of Pins :
- 3
- Element Configuration :
- Single
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 3-XFDFN
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Max Operating Temperature :
- 150°C
- Transition Frequency :
- 230MHz
- Frequency - Transition :
- 230MHz
- Published :
- 2011
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- PDTC114
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 1μA
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Resistor - Base (R1) :
- 10 k Ω
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 5mA 5V
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 150mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Datasheets
- PDTC114EMB315
Specialized ICs NXP Semiconductors PDTC114EMB315 Overview
Specialized ICs NXP Semiconductors PDTC114EMB315 represents a leading-edge solution in the field of pre-biased bipolar junction transistors (BJTs). This component is expertly crafted by NXP Semiconductors to deliver reliable and efficient performance for high-volume applications. The PDTC114EMB315 is designed to simplify circuit design and reduce component count by integrating the resistor and the transistor into a single package. This integration ensures consistent performance and reduces the likelihood of assembly errors, making it an ideal choice for automated production lines.
This transistor is especially useful in switching and amplification applications, where space and reliability are critical. With its compact SOT-323 package, it offers a minimal footprint on PCBs, yet maintains high thermal and electrical performance. NXP Semiconductors' commitment to quality is evident in the robust design and rigorous testing that each unit undergoes, ensuring that each PDTC114EMB315 meets the highest standards for both functionality and durability.
Key Features
The PDTC114EMB315 transistor comes packed with several key features that make it a prime choice for developers and engineers:
- Integrated resistor-transistor configuration, enhancing reliability and simplifying circuit design.
- Low saturation voltage and high gain, ensuring efficient operation.
- Compact SOT-323 package, ideal for space-constrained applications.
- Robust thermal and electrical characteristics, suitable for stringent operating conditions.
- Designed for automatic insertion, facilitating mass production capabilities.
Applications
The versatility of the Specialized ICs NXP Semiconductors PDTC114EMB315 makes it suitable for a wide range of applications, including:
- Power management circuits, where efficiency and reliability are paramount.
- Signal processing, where precision and miniaturization are needed.
- Consumer electronics, for consistent performance in devices such as smartphones and tablets.
- Automotive applications, where durability and dependability are critical under harsh conditions.
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