PDTC114EM,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Elements :

1

Min Operating Temperature :

-65°C

Power Dissipation :

250mW

Emitter Base Voltage (VEBO) :

10V

Terminal Position :

BOTTOM

Number of Terminations :

3

Resistor - Emitter Base (R2) :

10 k Ω

Transistor Type :

NPN - Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

230MHz

Mount :

Surface Mount

Polarity :

NPN

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Mounting Type :

Surface Mount

Pin Count :

3

Max Power Dissipation :

250mW

hFE Min :

30

Radiation Hardening :

No

ECCN Code :

EAR99

Lead Free :

Lead Free

Published :

2011

JESD-609 Code :

e3

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Package / Case :

SC-101, SOT-883

Collector Emitter Voltage (VCEO) :

50V

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

10 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Current - Collector Cutoff (Max) :

1μA

Element Configuration :

Single

Max Operating Temperature :

150°C

Base Part Number :

PDTC114