PDTC114EMB,315
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- Mfr.Part #
- PDTC114EMB,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- PDTC114EMB - UPN RESISTOR-EQUIPP
- Stock
- 43,685
- In Stock ：
- 43,685
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Package / Case :
- 3-XFDFN
- Collector Emitter Voltage (VCEO) :
- 150mV
- Pin Count :
- 3
- Max Power Dissipation :
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 5mA 5V
- Frequency - Transition :
- 230MHz
- Number of Terminations :
- 3
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Transition Frequency :
- 230MHz
- Resistor - Base (R1) :
- 10 k Ω
- Published :
- 2011
- Case Connection :
- COLLECTOR
- Max Operating Temperature :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Base Part Number :
- PDTC114
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Transistor Type :
- NPN - Pre-Biased
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA
- Min Operating Temperature :
- -65°C
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Mounting Type :
- Surface Mount
- Datasheets
- PDTC114EMB,315
PDTC114EMB,315 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Nexperia USA Inc. stock available at
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