PDTC114EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Resistor - Emitter Base (R2) :

10 k Ω

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Case Connection :

COLLECTOR

Mount :

Surface Mount

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

250mW

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Terminations :

3

Number of Elements :

1

Frequency - Transition :

230MHz

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Factory Lead Time :

8 Weeks

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

150mV

Pin Count :

3

Base Part Number :

PDTC114

Current - Collector Cutoff (Max) :

1μA

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Transistor Type :

NPN - Pre-Biased

Min Operating Temperature :

-65°C

Max Collector Current :

100mA

Published :

2011

Polarity/Channel Type :

NPN

Package / Case :

3-XFDFN

Resistor - Base (R1) :

10 k Ω

Terminal Finish :

Tin (Sn)

Transition Frequency :

230MHz

Element Configuration :

Single