PDTC124XE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

22 k Ω

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G3

Published :

2009

VCEsat-Max :

0.3 V

Surface Mount :

yes

Current - Collector (Ic) (Max) :

100mA

Number of Elements :

1

Mounting Type :

Surface Mount

Collector-Base Capacitance-Max :

3.5pF

Transistor Type :

NPN - Pre-Biased

Power Dissipation-Max (Abs) :

0.15W

Base Part Number :

PDTC124

Resistor - Emitter Base (R2) :

47 k Ω

Terminal Form :

Gull wing

Power Dissipation Ambient-Max :

0.15W

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

SC-75, SOT-416

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.14

HTS Code :

8541.21.00.95

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Power - Max :

150mW

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Operating Temperature (Max) :

150°C

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Voltage - Collector Emitter Breakdown (Max) :

50V

Terminal Position :

Dual

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3