PDTC124EQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Max Collector Current :

100mA

Pin Count :

3

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2014

Packaging :

Tape and Reel (TR)

Package / Case :

3-XDFN Exposed Pad

Max Power Dissipation :

280mW

Reference Standard :

AEC-Q101; IEC-60134

Frequency - Transition :

230MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-N3

Transition Frequency :

230MHz

Collector Emitter Voltage (VCEO) :

150mV

Current - Collector Cutoff (Max) :

1μA

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Series :

Automotive, AEC-Q101

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Transistor Type :

NPN - Pre-Biased

Number of Elements :

1

Resistor - Emitter Base (R2) :

22 k Ω

Resistor - Base (R1) :

22 k Ω

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

50V

Case Connection :

COLLECTOR

Power - Max :

280mW

Terminal Position :

Dual

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount