PDTC123EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector Cutoff (Max) :

1μA

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

250mW

Packaging :

Tape and Reel (TR)

Pin Count :

3

Radiation Hardening :

No

Number of Terminations :

3

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Package / Case :

3-XFDFN

Number of Pins :

3

Frequency - Transition :

230MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

2.2 k Ω

Transistor Type :

NPN - Pre-Biased

JESD-609 Code :

e3

Transition Frequency :

230MHz

Terminal Position :

BOTTOM

Min Operating Temperature :

-65°C

Resistor - Emitter Base (R2) :

2.2 k Ω

Polarity :

NPN

Terminal Finish :

Tin (Sn)

Max Collector Current :

100mA

Published :

2009

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

150mV

Base Part Number :

PDTC123

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Number of Elements :

1