PDTC115TU,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

hFE Min :

100

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

100 k Ω

Transistor Type :

NPN - Pre-Biased

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Min Operating Temperature :

-65°C

Polarity :

NPN

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Additional Feature :

BUILT IN BIAS RESISTOR

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

SC-70, SOT-323

Terminal Form :

Gull wing

Base Part Number :

PDTC115

Current - Collector Cutoff (Max) :

1μA

Element Configuration :

Single

Number of Terminations :

3

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Published :

2005

Power Dissipation :

200mW

Max Power Dissipation :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Mount :

Surface Mount

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount