PDTC115EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transition Frequency :

230MHz

Mounting Type :

Surface Mount

Number of Pins :

3

Package / Case :

3-XFDFN

Terminal Position :

BOTTOM

Min Operating Temperature :

-65°C

Collector Emitter Voltage (VCEO) :

150mV

Transistor Type :

NPN - Pre-Biased

Terminal Form :

NO LEAD

Pin Count :

3

Number of Terminations :

3

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Case Connection :

COLLECTOR

Element Configuration :

Single

Frequency - Transition :

230MHz

Max Power Dissipation :

250mW

Resistor - Base (R1) :

100 k Ω

Current - Collector Cutoff (Max) :

1μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

PDTC115

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

100 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Number of Elements :

1

Polarity/Channel Type :

NPN

Max Collector Current :

20mA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA