PDTC115EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Emitter Base (R2) :

100 k Ω

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Single

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

JESD-609 Code :

e3

Transistor Type :

NPN - Pre-Biased

Number of Terminations :

3

Number of Pins :

3

Terminal Form :

NO LEAD

Min Operating Temperature :

-65°C

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Frequency - Transition :

230MHz

Pin Count :

3

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

1μA

Resistor - Base (R1) :

100 k Ω

Max Power Dissipation :

250mW

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Transition Frequency :

230MHz

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Max Collector Current :

20mA

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

150mV

Mounting Type :

Surface Mount

Package / Case :

3-XFDFN

Max Operating Temperature :

150°C

Mount :

Surface Mount

Number of Elements :

1

Base Part Number :

PDTC115