PDTC115EM,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

NPN - Pre-Biased

Min Operating Temperature :

-65°C

Resistor - Base (R1) :

100 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Current - Collector Cutoff (Max) :

1μA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Radiation Hardening :

No

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Position :

BOTTOM

Collector Emitter Voltage (VCEO) :

50V

Max Collector Current :

20mA

Polarity :

NPN

Height :

470μm

hFE Min :

80

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

50V

Continuous Collector Current :

20mA

Max Power Dissipation :

250mW

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Published :

2009

Mounting Type :

Surface Mount

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Resistor - Emitter Base (R2) :

100 k Ω

Package / Case :

SC-101, SOT-883

Max Operating Temperature :

150°C

Base Part Number :

PDTC115

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Number of Elements :

1

Transistor Application :

SWITCHING

Mount :

Surface Mount

Length :

1.02mm

Width :

620μm

ECCN Code :

EAR99