PDTC114YQB-QZ
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- Mfr.Part #
- PDTC114YQB-QZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- PDTC114YQB-Q/SOT8015/DFN1110D-
- Stock
- 4,900
- In Stock ：
- 4,900
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Subcategory :
- Transistors
- Manufacturer :
- Nexperia
- Supplier Device Package :
- DFN1110D-3
- Mounting Type :
- Surface Mount, Wettable Flank
- Package :
- Digi-Reel?
- Configuration :
- Single
- Package / Case :
- 3-XDFN Exposed Pad
- Resistor - Base (R1) :
- 10 kOhms
- MSL :
- -
- Product Category :
- Bipolar Transistors - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 5mA, 5V
- Transistor Polarity :
- Single NPN
- Typical Resistor Ratio :
- 4.7
- Product Status :
- Active
- Power - Max :
- 340 mW
- Packaging :
- MouseReel
- Current - Collector Cutoff (Max) :
- 100nA
- Mounting Style :
- SMD/SMT
- Minimum Operating Temperature :
- - 55 C
- Current - Collector (Ic) (Max) :
- 100 mA
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN - Pre-Biased
- Maximum Operating Temperature :
- + 150 C
- Brand :
- Nexperia
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 250µA, 5mA
- Continuous Collector Current :
- 100mA
- Frequency - Transition :
- 230 MHz
- Power Dissipation :
- 340mW
- RoHS :
- Details
- Package Type :
- DFN1110D-3
- Resistor - Emitter Base (R2) :
- 47 kOhms
- Product Type :
- BJTs - Bipolar Transistors - Pre-Biased
- Qualification :
- AEC-Q101
- Number of Elements per Chip :
- 3
- Datasheets
- PDTC114YQB-QZ
PDTC114YQB-QZ datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Nexperia USA Inc. stock available at
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