PDTC114YE,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G3

Published :

2011

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

50V

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Transistor Type :

NPN - Pre-Biased

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

ECCN Code :

EAR99

Power Dissipation Ambient-Max :

0.15W

JESD-609 Code :

e3

Base Part Number :

PDTC114

Operating Temperature (Max) :

150°C

Packaging :

Tape and Reel (TR)

Package / Case :

SC-75, SOT-416

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Power - Max :

150mW

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Surface Mount :

yes

HTS Code :

8541.21.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

0.15W

Pin Count :

3

VCEsat-Max :

0.3 V

Number of Terminations :

3

Resistor - Base (R1) :

10 k Ω

Current - Collector (Ic) (Max) :

100mA

Collector-Base Capacitance-Max :

3.5pF

Resistor - Emitter Base (R2) :

47 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V

Current - Collector Cutoff (Max) :

1μA