PDTC114YE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

10 k Ω

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Packaging :

Tape and Reel (TR)

Base Part Number :

PDTC114

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Transistor Type :

NPN - Pre-Biased

Operating Temperature (Max) :

150°C

Number of Terminations :

3

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Current - Collector (Ic) (Max) :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

HTS Code :

8541.21.00.95

Current - Collector Cutoff (Max) :

1μA

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Package / Case :

SC-75, SOT-416

Power Dissipation Ambient-Max :

0.15W

Transistor Element Material :

SILICON

Collector-Base Capacitance-Max :

3.5pF

Resistor - Emitter Base (R2) :

47 k Ω

JESD-609 Code :

e3

Terminal Position :

Dual

Voltage - Collector Emitter Breakdown (Max) :

50V

Power - Max :

150mW

Polarity/Channel Type :

NPN

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V

JESD-30 Code :

R-PDSO-G3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Mounting Type :

Surface Mount

VCEsat-Max :

0.3 V

Published :

2003

Power Dissipation-Max (Abs) :

0.15W

Terminal Form :

Gull wing

ECCN Code :

EAR99