PDTC114TE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Voltage - Collector Emitter Breakdown (Max) :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature (Max) :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR

Published :

2003

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

0.15W

Polarity/Channel Type :

NPN

Resistor - Base (R1) :

10 k Ω

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Current - Collector (Ic) (Max) :

100mA

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Number of Terminations :

3

HTS Code :

8541.21.00.95

Transistor Application :

SWITCHING

Base Part Number :

PDTC114

JESD-30 Code :

R-PDSO-G3

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Package / Case :

SC-75, SOT-416

Terminal Position :

Dual

Transistor Type :

NPN - Pre-Biased

Transistor Element Material :

SILICON

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Power - Max :

150mW