PD55035S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Min Operating Temperature :

-65°C

Max Operating Temperature :

165°C

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

7A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Element Configuration :

Single

Transistor Type :

LDMOS

Drain to Source Breakdown Voltage :

40V

Frequency :

500MHz

Voltage - Test :

12.5V

Current - Test :

200mA

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F2

Pin Count :

10

ECCN Code :

EAR99

Power Gain :

16.9dB

Power Dissipation :

95W

Gate to Source Voltage (Vgs) :

20V

Case Connection :

SOURCE

Radiation Hardening :

No

Number of Pins :

3

Additional Feature :

High Reliability

Lead Free :

Lead Free

Factory Lead Time :

52 Weeks

Terminal Position :

Dual

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

225

Terminal Form :

Flat

Base Part Number :

PD55035

Number of Elements :

1

Packaging :

Tube

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerSO-10 Exposed Bottom Pad

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating :

7A

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Max Power Dissipation :

95W

Voltage - Rated DC :

40V

Max Output Power :

35W

Drain Current-Max (Abs) (ID) :

7A