PD55003-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Test :

12.5V

Drain to Source Breakdown Voltage :

40V

Additional Feature :

High Reliability

Max Operating Temperature :

165°C

Min Operating Temperature :

-65°C

Packaging :

Tube

Current - Test :

50mA

Radiation Hardening :

No

Factory Lead Time :

25 Weeks

Drain to Source Voltage (Vdss) :

40V

ECCN Code :

EAR99

Number of Terminations :

2

Package / Case :

PowerSO-10 Exposed Bottom Pad

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2.5A

Pin Count :

10

Power Gain :

17dB

Max Output Power :

3W

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

2.5A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation :

31.7W

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Length :

7.5mm

Height :

3.5mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Case Connection :

SOURCE

Max Power Dissipation :

31.7W

JESD-609 Code :

e3

Lead Free :

Lead Free

Number of Pins :

3

Transistor Type :

LDMOS

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

250

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-G2

Terminal Finish :

Matte Tin (Sn) - annealed

Base Part Number :

PD55003

REACH SVHC :

No SVHC

Voltage - Rated DC :

40V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

9.4mm

Frequency :

500MHz