PD55003L-E
- Mfr.Part #
- PD55003L-E
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- TRANSISTOR RF 5X5 POWERFLAT
- Stock
- 2,413
- In Stock :
- 2,413
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- S-PQCC-N5
- Transistor Type :
- LDMOS
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Termination :
- SMD/SMT
- Lead Free :
- Lead Free
- Dual Supply Voltage :
- 40V
- Current - Test :
- 50mA
- Number of Pins :
- 8
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Max Operating Temperature :
- 150°C
- Number of Terminations :
- 5
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 40V
- Continuous Drain Current (ID) :
- 2.5A
- Package / Case :
- 8-PowerVDFN
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 2.5A
- Element Configuration :
- Single
- Terminal Finish :
- MATTE TIN
- Base Part Number :
- PD55003
- Terminal Position :
- QUAD
- Frequency :
- 500MHz
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Height :
- 880μm
- Length :
- 5mm
- Pin Count :
- 5
- Input Capacitance :
- 34pF
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 12V
- REACH SVHC :
- No SVHC
- Case Connection :
- SOURCE
- Width :
- 5mm
- Voltage - Test :
- 12.5V
- Min Operating Temperature :
- -65°C
- Gain :
- 19dB
- Factory Lead Time :
- 11 Weeks
- Max Power Dissipation :
- 14W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 15V
- Radiation Hardening :
- No
- Nominal Vgs :
- 5 V
- Max Output Power :
- 3W
- Datasheets
- PD55003L-E

PD55003L-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
The STMicroelectronics Transistors - FETs, MOSFETs - RF PD55003L-E is a 5x5 PowerFlat RF transistor designed for use in high-frequency applications. It features a low on-resistance of 0.3 ohms, a high breakdown voltage of 30V, and a low gate charge of 0.3nC. The device is suitable for use in RF power amplifiers, switching applications, and other high-frequency applications.
Features:
• Low on-resistance of 0.3 ohms
• High breakdown voltage of 30V
• Low gate charge of 0.3nC
• High-frequency operation
• Low thermal resistance
• High power dissipation
• RoHS compliant
Applications:
• RF power amplifiers
• Switching applications
• High-frequency applications
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