PD55008-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Width :

9.4mm

Power Gain :

17dB

Power Dissipation :

52.8W

Max Operating Temperature :

165°C

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time :

25 Weeks

Mount :

Surface Mount

Element Configuration :

Single

Max Output Power :

8W

Terminal Position :

Dual

Length :

7.5mm

Polarity/Channel Type :

N-Channel

Input Capacitance :

58pF

JESD-609 Code :

e3

Radiation Hardening :

No

Additional Feature :

High Reliability

Drain to Source Breakdown Voltage :

40V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

4A

Voltage - Rated DC :

40V

Package / Case :

PowerSO-10 Exposed Bottom Pad

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Frequency :

500MHz

Min Operating Temperature :

-65°C

Peak Reflow Temperature (Cel) :

250

Number of Pins :

3

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn) - annealed

Current Rating :

4A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current - Test :

150mA

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

4A

Case Connection :

SOURCE

JESD-30 Code :

R-PDSO-G2

Voltage - Test :

12.5V

Base Part Number :

PD55008

Transistor Type :

LDMOS

Transistor Application :

AMPLIFIER

Drain to Source Voltage (Vdss) :

40V

Height :

3.5mm

Terminal Form :

Gull wing

Max Power Dissipation :

52.8W

Pin Count :

10

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Min Breakdown Voltage :

40V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE