PD55008-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Rated DC :

40V

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Case Connection :

SOURCE

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Mode :

ENHANCEMENT MODE

Power Gain :

17dB

Frequency :

500MHz

Factory Lead Time :

25 Weeks

Transistor Type :

LDMOS

Height :

3.5mm

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

250

Current - Test :

150mA

Terminal Position :

Dual

Max Output Power :

8W

Power Dissipation :

52.8W

Package / Case :

PowerSO-10 Exposed Bottom Pad

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Min Operating Temperature :

-65°C

Number of Pins :

3

Current Rating :

4A

Drain Current-Max (Abs) (ID) :

4A

JESD-609 Code :

e3

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Voltage - Test :

12.5V

Min Breakdown Voltage :

40V

Drain to Source Breakdown Voltage :

40V

Length :

7.5mm

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G2

Continuous Drain Current (ID) :

4A

Pin Count :

10

Input Capacitance :

58pF

Base Part Number :

PD55008

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

40V

Width :

9.4mm

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Max Operating Temperature :

165°C

Max Power Dissipation :

52.8W

Mount :

Surface Mount

Radiation Hardening :

No