PD55008-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Test :

12.5V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Test :

150mA

JESD-609 Code :

e3

Current Rating :

4A

Max Output Power :

8W

Additional Feature :

High Reliability

Number of Terminations :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

4A

Number of Pins :

3

Width :

9.4mm

Max Power Dissipation :

52.8W

Pin Count :

10

Continuous Drain Current (ID) :

4A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

40V

Input Capacitance :

58pF

Terminal Position :

Dual

Polarity/Channel Type :

N-Channel

Min Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Dissipation :

52.8W

Packaging :

Tube

Case Connection :

SOURCE

Frequency :

500MHz

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Terminal Form :

Gull wing

Length :

7.5mm

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PDSO-G2

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

40V

Mount :

Surface Mount

Transistor Type :

LDMOS

Max Operating Temperature :

165°C

ECCN Code :

EAR99

Min Operating Temperature :

-65°C

Height :

3.5mm

Element Configuration :

Single

Base Part Number :

PD55008

Factory Lead Time :

25 Weeks

Package / Case :

PowerSO-10 Exposed Bottom Pad

Power Gain :

17dB

Drain to Source Breakdown Voltage :

40V

Peak Reflow Temperature (Cel) :

250

RoHS Status :

ROHS3 Compliant