PD55003TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

N-Channel

Base Part Number :

PD55003

Mount :

Surface Mount

Voltage - Test :

12.5V

Max Operating Temperature :

165°C

Min Operating Temperature :

-65°C

Package / Case :

PowerSO-10 Exposed Bottom Pad

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Pins :

4

Peak Reflow Temperature (Cel) :

250

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - annealed

Max Power Dissipation :

31.7W

Drain to Source Breakdown Voltage :

40V

Case Connection :

SOURCE

Factory Lead Time :

25 Weeks

JESD-30 Code :

R-PDSO-G2

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Transistor Type :

LDMOS

Current - Test :

50mA

Radiation Hardening :

No

JESD-609 Code :

e3

Power Dissipation :

31.7W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

30

Max Output Power :

3W

Pin Count :

10

Current Rating :

2.5A

Element Configuration :

Single

Frequency :

500MHz

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Gain :

17dB

Continuous Drain Current (ID) :

2.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR