PD55008STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Current Rating :

4A

Drain to Source Breakdown Voltage :

40V

Terminal Form :

Flat

Number of Elements :

1

Case Connection :

SOURCE

Max Power Dissipation :

52.8W

Drain to Source Voltage (Vdss) :

40V

Max Output Power :

8W

Base Part Number :

PD55008

Current - Test :

150mA

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Gain :

17dB

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

PowerSO-10 Exposed Bottom Pad

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Terminal Finish :

MATTE TIN

Transistor Application :

AMPLIFIER

Continuous Drain Current (ID) :

4A

Transistor Type :

LDMOS

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-F2

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-65°C

Frequency :

500MHz

ECCN Code :

EAR99

Number of Terminations :

2

Max Operating Temperature :

165°C

Peak Reflow Temperature (Cel) :

225

Power Dissipation :

52.8W

Pin Count :

10

Qualification Status :

Not Qualified

Number of Pins :

3

Mount :

Surface Mount

Voltage - Test :

12.5V