PD55008S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Power Dissipation :

52.8W

Lead Free :

Lead Free

Power Dissipation :

52.8W

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

250

Pin Count :

10

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

ECCN Code :

EAR99

Case Connection :

SOURCE

Drain to Source Voltage (Vdss) :

40V

Additional Feature :

High Reliability

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

AMPLIFIER

Voltage - Test :

12.5V

Current - Test :

150mA

Current Rating :

4A

Mount :

Surface Mount

Voltage - Rated DC :

40V

Number of Terminations :

2

Number of Pins :

3

Gain :

17dB

Transistor Type :

LDMOS

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

165°C

Min Operating Temperature :

-65°C

Drain to Source Breakdown Voltage :

40V

Base Part Number :

PD55008

Factory Lead Time :

25 Weeks

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-F2

Continuous Drain Current (ID) :

4A

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

4A

Package / Case :

PowerSO-10 Exposed Bottom Pad

Frequency :

500MHz

Radiation Hardening :

No

Max Output Power :

8W

Terminal Form :

Flat

Terminal Finish :

Matte Tin (Sn) - annealed