PD55008S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Mount :

Surface Mount

Power Dissipation :

52.8W

Number of Elements :

1

Drain to Source Voltage (Vdss) :

40V

Case Connection :

SOURCE

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-F2

Peak Reflow Temperature (Cel) :

250

Max Operating Temperature :

165°C

Terminal Position :

Dual

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Continuous Drain Current (ID) :

4A

Voltage - Rated DC :

40V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

JESD-609 Code :

e3

Element Configuration :

Single

Voltage - Test :

12.5V

Package / Case :

PowerSO-10 Exposed Bottom Pad

Drain to Source Breakdown Voltage :

40V

Transistor Type :

LDMOS

Base Part Number :

PD55008

Gain :

17dB

Current Rating :

4A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Transistor Application :

AMPLIFIER

Max Output Power :

8W

Factory Lead Time :

25 Weeks

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Radiation Hardening :

No

Frequency :

500MHz

Pin Count :

10

Current - Test :

150mA

Drain Current-Max (Abs) (ID) :

4A

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

52.8W

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

High Reliability

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

30