PD55008S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Type :

LDMOS

Base Part Number :

PD55008

Max Output Power :

8W

Voltage - Rated DC :

40V

Voltage - Test :

12.5V

Min Operating Temperature :

-65°C

Radiation Hardening :

No

Factory Lead Time :

25 Weeks

ECCN Code :

EAR99

Power Dissipation :

52.8W

Gain :

17dB

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

40V

Case Connection :

SOURCE

Terminal Position :

Dual

Max Operating Temperature :

165°C

Drain Current-Max (Abs) (ID) :

4A

Operating Mode :

ENHANCEMENT MODE

Pin Count :

10

Continuous Drain Current (ID) :

4A

Frequency :

500MHz

Polarity/Channel Type :

N-Channel

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Power Dissipation :

52.8W

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-F2

Peak Reflow Temperature (Cel) :

250

Current Rating :

4A

Additional Feature :

High Reliability

Element Configuration :

Single

Mount :

Surface Mount

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - annealed

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

40V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

JESD-609 Code :

e3

Current - Test :

150mA

Packaging :

Tube

Package / Case :

PowerSO-10 Exposed Bottom Pad

Lead Free :

Lead Free

Terminal Form :

Flat