PD55008TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

ECCN Code :

EAR99

Max Power Dissipation :

52.8W

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Base Part Number :

PD55008

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

4A

Number of Pins :

3

Current Rating :

4A

Drain to Source Breakdown Voltage :

40V

Gain :

17dB

Mount :

Surface Mount

Frequency :

500MHz

Transistor Application :

AMPLIFIER

Factory Lead Time :

25 Weeks

Number of Terminations :

2

Terminal Position :

Dual

Case Connection :

SOURCE

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - annealed

Peak Reflow Temperature (Cel) :

250

Drain Current-Max (Abs) (ID) :

4A

Max Output Power :

8W

Min Operating Temperature :

-65°C

Transistor Type :

LDMOS

Current - Test :

150mA

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

165°C

Voltage - Test :

12.5V

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G2

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Element Configuration :

Single

Power Dissipation :

52.8W

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

40V

Pin Count :

10

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Additional Feature :

High Reliability