PD55008TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

4A

JESD-609 Code :

e3

Voltage - Test :

12.5V

Pin Count :

10

Gate to Source Voltage (Vgs) :

20V

Transistor Type :

LDMOS

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-30 Code :

R-PDSO-G2

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

165°C

Drain to Source Voltage (Vdss) :

40V

Number of Pins :

3

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - annealed

Polarity/Channel Type :

N-Channel

Additional Feature :

High Reliability

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Min Operating Temperature :

-65°C

Number of Elements :

1

Current Rating :

4A

Power Dissipation :

52.8W

Factory Lead Time :

25 Weeks

Case Connection :

SOURCE

Packaging :

Tape and Reel (TR)

Frequency :

500MHz

Terminal Position :

Dual

Radiation Hardening :

No

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

4A

Gain :

17dB

Peak Reflow Temperature (Cel) :

250

Max Output Power :

8W

Terminal Form :

Gull wing

Base Part Number :

PD55008

Operating Mode :

ENHANCEMENT MODE

Current - Test :

150mA

Transistor Application :

AMPLIFIER

Max Power Dissipation :

52.8W