PD55015-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Number of Elements :

1

Current - Test :

150mA

Voltage - Test :

12.5V

Radiation Hardening :

No

Max Power Dissipation :

73W

Min Breakdown Voltage :

40V

Power Dissipation :

73W

JESD-609 Code :

e3

Min Operating Temperature :

-65°C

Lead Free :

Lead Free

Max Operating Temperature :

165°C

Max Output Power :

15W

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

9.4mm

Polarity/Channel Type :

N-Channel

Frequency :

500MHz

Input Capacitance :

89pF

Mount :

Surface Mount

Power Gain :

14dB

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

25 Weeks

Terminal Finish :

Matte Tin (Sn) - annealed

REACH SVHC :

No SVHC

Base Part Number :

PD55015

Number of Terminations :

2

Height :

3.5mm

Transistor Type :

LDMOS

Drain to Source Breakdown Voltage :

40V

Case Connection :

SOURCE

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

5A

Pin Count :

10

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

250

Number of Pins :

2

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

40V

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Element Configuration :

Single

Continuous Drain Current (ID) :

5A

Current Rating :

5A

Length :

7.5mm

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

High Reliability