PD55035-E

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Mfr.Part #
PD55035-E
Manufacturer
STMicroelectronics
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Datasheet
Download
Description
FET RF 40V 500MHZ PWRSO-10
Stock
1,961
In Stock :
1,961

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - RF
Case Connection :
SOURCE
ECCN Code :
EAR99
Mount :
Surface Mount
Number of Elements :
1
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
40V
Terminal Form :
Gull wing
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
40V
Time@Peak Reflow Temperature-Max (s) :
30
Element Configuration :
Single
Continuous Drain Current (ID) :
7A
Drain Current-Max (Abs) (ID) :
7A
Current - Test :
200mA
Gate to Source Voltage (Vgs) :
20V
Base Part Number :
PD55035
Packaging :
Tube
Pin Count :
10
Frequency :
500MHz
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
High Reliability
Max Operating Temperature :
165°C
Transistor Application :
AMPLIFIER
Power Dissipation :
95W
Max Power Dissipation :
95W
Terminal Finish :
Matte Tin (Sn)
Current Rating :
7A
JESD-30 Code :
R-PDSO-G2
Min Operating Temperature :
-65°C
Max Output Power :
35W
Peak Reflow Temperature (Cel) :
250
Voltage - Test :
12.5V
Package / Case :
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
RoHS Status :
ROHS3 Compliant
Power Gain :
16.9dB
Terminal Position :
Dual
Number of Terminations :
2
Radiation Hardening :
No
Transistor Type :
LDMOS
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Operating Mode :
ENHANCEMENT MODE
Datasheets
PD55035-E
Introducing Transistors - FETs, MOSFETs - RF STMicroelectronics PD55035-E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:PD55035, Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads), Number of Terminations:2, Number of Pins:3, PD55035-E pinout, PD55035-E datasheet PDF, PD55035-E amp .Beyond Transistors - FETs, MOSFETs - RF STMicroelectronics PD55035-E ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics PD55035-E


PD55035-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at

PD55035-E Description


The PD55035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high-gain, broadband commercial, and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55035-E boasts the excellent gain, linearity, and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC-approved, high-power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.



PD55035-E Features


Excellent thermal stability

Common source configuration

POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V

New RF plastic package



PD55035-E Applications


Automotive 

Infotainment & cluster 

Communications equipment 

Broadband fixed line access 

Personal electronics 

Connected peripherals & printers


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