PD55035-E

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Mfr.Part #
PD55035-E
Manufacturer
STMicroelectronics
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Datasheet
Download
Description
FET RF 40V 500MHZ PWRSO-10
Stock
1,961
In Stock :
1,961

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - RF
Max Power Dissipation :
95W
Min Operating Temperature :
-65°C
Package / Case :
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Time@Peak Reflow Temperature-Max (s) :
30
Max Operating Temperature :
165°C
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Packaging :
Tube
Power Dissipation :
95W
Drain to Source Voltage (Vdss) :
40V
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
7A
Frequency :
500MHz
ECCN Code :
EAR99
Number of Pins :
3
Number of Terminations :
2
Terminal Form :
Gull wing
Drain Current-Max (Abs) (ID) :
7A
Transistor Type :
LDMOS
Transistor Application :
AMPLIFIER
Pin Count :
10
Current Rating :
7A
Radiation Hardening :
No
Number of Elements :
1
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Part Number :
PD55035
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
250
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Voltage - Test :
12.5V
JESD-30 Code :
R-PDSO-G2
Max Output Power :
35W
Power Gain :
16.9dB
Drain to Source Breakdown Voltage :
40V
Case Connection :
SOURCE
Terminal Position :
Dual
Additional Feature :
High Reliability
Current - Test :
200mA
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Datasheets
PD55035-E
Introducing Transistors - FETs, MOSFETs - RF STMicroelectronics PD55035-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads), Number of Pins:3, Number of Terminations:2, Base Part Number:PD55035, PD55035-E pinout, PD55035-E datasheet PDF, PD55035-E amp .Beyond Transistors - FETs, MOSFETs - RF STMicroelectronics PD55035-E ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics PD55035-E


PD55035-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at

PD55035-E Description


The PD55035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high-gain, broadband commercial, and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55035-E boasts the excellent gain, linearity, and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC-approved, high-power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.



PD55035-E Features


Excellent thermal stability

Common source configuration

POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V

New RF plastic package



PD55035-E Applications


Automotive 

Infotainment & cluster 

Communications equipment 

Broadband fixed line access 

Personal electronics 

Connected peripherals & printers


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