PD55035-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain Current-Max (Abs) (ID) :

7A

Polarity/Channel Type :

N-Channel

Current Rating :

7A

Continuous Drain Current (ID) :

7A

Pin Count :

10

Peak Reflow Temperature (Cel) :

250

Number of Elements :

1

Frequency :

500MHz

Base Part Number :

PD55035

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

20V

Max Output Power :

35W

Transistor Type :

LDMOS

Element Configuration :

Single

Terminal Form :

Gull wing

Power Gain :

16.9dB

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

95W

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

SOURCE

Packaging :

Tube

Current - Test :

200mA

Power Dissipation :

95W

Min Operating Temperature :

-65°C

Transistor Application :

AMPLIFIER

Drain to Source Breakdown Voltage :

40V

Radiation Hardening :

No

Max Operating Temperature :

165°C

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G2

Number of Pins :

3

Voltage - Test :

12.5V

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Drain to Source Voltage (Vdss) :

40V