PD55015TR-E
- Mfr.Part #
- PD55015TR-E
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet
- Download
- Description
- TRANS RF N-CH FET POWERSO-10RF
- Stock
- 1,149
- In Stock :
- 1,149
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 250
- Number of Terminations :
- 2
- Factory Lead Time :
- 25 Weeks
- Frequency :
- 500MHz
- Base Part Number :
- PD55015
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Max Operating Temperature :
- 165°C
- Current Rating :
- 5A
- JESD-609 Code :
- e3
- Pin Count :
- 10
- Max Power Dissipation :
- 73W
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Gain :
- 14dB
- Package / Case :
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- LDMOS
- Drain to Source Voltage (Vdss) :
- 40V
- Drain Current-Max (Abs) (ID) :
- 7A
- Number of Pins :
- 3
- Terminal Finish :
- MATTE TIN
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Reach Compliance Code :
- not_compliant
- Min Operating Temperature :
- -65°C
- Terminal Form :
- Gull wing
- Current - Test :
- 150mA
- Voltage - Test :
- 12.5V
- Case Connection :
- SOURCE
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 5A
- JESD-30 Code :
- R-PDSO-G2
- Drain to Source Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Additional Feature :
- High Reliability
- Gate to Source Voltage (Vgs) :
- 20V
- Max Output Power :
- 15W
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 73W
- Min Breakdown Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Datasheets
- PD55015TR-E

PD55015TR-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
The STMicroelectronics PD55015TR-E is a N-channel RF power field-effect transistor (FET) in a PowerSOT-10RF package. It is designed for use in RF power amplifiers, switches, and other applications requiring high power and high gain.
Features:
• High power and high gain
• Low noise figure
• Low thermal resistance
• High breakdown voltage
• Low gate-source capacitance
• Low gate-drain capacitance
• Low gate-drain leakage current
• High frequency operation
Applications:
• RF power amplifiers
• RF switches
• RF power detectors
• RF power combiners
• RF power dividers
• RF power mixers
• RF power attenuators
• RF power limiters
• RF power detectors
• RF power detectors
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