PBSS9410PA,115
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- Mfr.Part #
- PBSS9410PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 100V 2.7A 3HUSON
- Stock
- 79,199
- In Stock ：
- 79,199
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 1A 2V
- Power Dissipation :
- 2.1W
- Operating Temperature :
- 150°C TJ
- Published :
- 2010
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 135mA, 2.7A
- Frequency :
- 115MHz
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 115MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PBSS9410
- Collector Base Voltage (VCBO) :
- 100V
- Transition Frequency :
- 115MHz
- Max Breakdown Voltage :
- 100V
- Package / Case :
- 3-PowerUDFN
- hFE Min :
- 15
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 2.1W
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 2.7A
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 100V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -7V
- Datasheets
- PBSS9410PA,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS9410PA,115 Overview
In this device, the DC current gain is 170 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 450mV @ 135mA, 2.7A.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 115MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2.7A volts at Single BJT transistors maximum.
PBSS9410PA,115 Features
the DC current gain for this device is 170 @ 1A 2V
the vce saturation(Max) is 450mV @ 135mA, 2.7A
the emitter base voltage is kept at -7V
a transition frequency of 115MHz
PBSS9410PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS9410PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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