PBSS2515VPN,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

15V

Polarity :

NPN, PNP

Published :

2001

Power Dissipation :

200mW

Number of Elements :

2

Frequency - Transition :

420MHz 280MHz

Terminal Form :

Flat

Max Power Dissipation :

200mW

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

420MHz

Gain Bandwidth Product :

420MHz

Transistor Element Material :

SILICON

Number of Pins :

6

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

150°C TJ

Base Part Number :

PBSS2515*PN

Transistor Type :

NPN, PNP

Package / Case :

SOT-563, SOT-666

Height :

6.35mm

Radiation Hardening :

No

Number of Terminations :

6

Mount :

Surface Mount

Length :

6.35mm

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 2V

Transition Frequency :

420MHz

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

15V

Lead Free :

Lead Free

Max Collector Current :

500mA

Width :

6.35mm

Collector Emitter Breakdown Voltage :

15V

Factory Lead Time :

4 Weeks

Weight :

4.535924g

Pin Count :

6

Power - Max :

300mW

Max Breakdown Voltage :

15V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 500mA

Packaging :

Tape and Reel (TR)