PBSS2540MB,315

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Mfr.Part #
PBSS2540MB,315
Manufacturer
Nexperia
Package / Case
3-XFDFN
Datasheet
Download
Description
TRANS NPN 40V 0.5A DFN1006B-3
Stock
9,669
In Stock :
9,669

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
40V
Mounting Type :
Surface Mount
Gain Bandwidth Product :
450MHz
Collector Emitter Breakdown Voltage :
40V
Package / Case :
3-XFDFN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
500mA
Base Part Number :
PBSS2540
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
50mV @ 500μA, 10mA
Published :
2016
Emitter Base Voltage (VEBO) :
6V
Number of Pins :
3
Factory Lead Time :
8 Weeks
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 10mA 2V
Max Breakdown Voltage :
40V
Max Power Dissipation :
590mW
Transistor Type :
NPN
Mount :
Surface Mount
Radiation Hardening :
No
Element Configuration :
Single
hFE Min :
200
Current - Collector Cutoff (Max) :
100μA ICBO
Pin Count :
3
Collector Emitter Saturation Voltage :
250mV
Power - Max :
250mW
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Packaging :
Tape and Reel (TR)
Collector Base Voltage (VCBO) :
40V
Datasheets
PBSS2540MB,315
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS2540MB,315 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:3-XFDFN, Base Part Number:PBSS2540, Operating Temperature:150°C TJ, Number of Pins:3, PBSS2540MB,315 pinout, PBSS2540MB,315 datasheet PDF, PBSS2540MB,315 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS2540MB,315 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS2540MB,315


NPN 150°C TJ 100μA ICBO 3-XFDFN Tape & Reel (TR) Surface Mount

PBSS2540MB,315 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 50mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.

PBSS2540MB,315 Features


the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 50mV @ 500μA, 10mA
the emitter base voltage is kept at 6V


PBSS2540MB,315 Applications


There are a lot of Nexperia USA Inc.
PBSS2540MB,315 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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