PBSS2540MB,315
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- Mfr.Part #
- PBSS2540MB,315
- Manufacturer
- Nexperia
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.5A DFN1006B-3
- Stock
- 9,669
- In Stock ：
- 9,669
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 590mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 50mV @ 500μA, 10mA
- Power - Max :
- 250mW
- hFE Min :
- 200
- Element Configuration :
- Single
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 40V
- Max Collector Current :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PBSS2540
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- 3-XFDFN
- Published :
- 2016
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 8 Weeks
- Gain Bandwidth Product :
- 450MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Pin Count :
- 3
- Datasheets
- PBSS2540MB,315
NPN 150°C TJ 100μA ICBO 3-XFDFN Tape & Reel (TR) Surface Mount
PBSS2540MB,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 50mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.
PBSS2540MB,315 Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 50mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
PBSS2540MB,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2540MB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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