PBSS2540MB,315
- Mfr.Part #
- PBSS2540MB,315
- Manufacturer
- Nexperia
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.5A DFN1006B-3
- Stock
- 9,669
- In Stock :
- 9,669
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 450MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- 3-XFDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Base Part Number :
- PBSS2540
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 50mV @ 500μA, 10mA
- Published :
- 2016
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Max Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 590mW
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Element Configuration :
- Single
- hFE Min :
- 200
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 250mV
- Power - Max :
- 250mW
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 40V
- Datasheets
- PBSS2540MB,315

NPN 150°C TJ 100μA ICBO 3-XFDFN Tape & Reel (TR) Surface Mount
PBSS2540MB,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 50mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.
PBSS2540MB,315 Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 50mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
PBSS2540MB,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2540MB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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