PBSS2515M,315
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- Mfr.Part #
- PBSS2515M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A SOT883
- Stock
- 3,347
- In Stock ：
- 3,347
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Power Dissipation :
- 430mW
- Gain Bandwidth Product :
- 420MHz
- Published :
- 2009
- JESD-609 Code :
- e3
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 15V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 8 Weeks
- Max Breakdown Voltage :
- 15V
- Number of Elements :
- 1
- Base Part Number :
- PBSS2515
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 15V
- Transition Frequency :
- 420MHz
- Package / Case :
- SC-101, SOT-883
- Max Power Dissipation :
- 430mW
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 420MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 15V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PBSS2515M,315
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS2515M,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 100mA 2V.When VCE saturation is 250mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 420MHz.This device can take an input voltage of 15V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
PBSS2515M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 420MHz
PBSS2515M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2515M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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