PBSS2540E,115
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- Mfr.Part #
- PBSS2540E,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.5A SC75
- Stock
- 8,606
- In Stock ：
- 8,606
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 450MHz
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 500mA
- Terminal Form :
- Gull wing
- Published :
- 2009
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Frequency - Transition :
- 450MHz
- Base Part Number :
- PBSS2540
- Package / Case :
- SC-75, SOT-416
- Power Dissipation-Max (Abs) :
- 0.25W
- Power - Max :
- 250mW
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PDSO-G3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PBSS2540E,115
PBSS2540E,115 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
PBSS2540E,115 Overview
DC current gain in this device equals 100 @ 100mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 50mA, 500mA.As a result, the part has a transition frequency of 450MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PBSS2540E,115 Features
the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
a transition frequency of 450MHz
PBSS2540E,115 Applications
There are a lot of NXP USA Inc.
PBSS2540E,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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