PBSS2515M,315
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- Mfr.Part #
- PBSS2515M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A SOT883
- Stock
- 3,347
- In Stock ：
- 3,347
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 15V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 430mW
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 15V
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 15V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Power Dissipation :
- 430mW
- Frequency :
- 420MHz
- Transition Frequency :
- 420MHz
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 15V
- Pin Count :
- 3
- Terminal Position :
- BOTTOM
- Published :
- 2009
- Case Connection :
- COLLECTOR
- Base Part Number :
- PBSS2515
- Package / Case :
- SC-101, SOT-883
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 420MHz
- Datasheets
- PBSS2515M,315
PBSS2515M,315 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS2515M,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 100mA 2V.When VCE saturation is 250mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 420MHz.This device can take an input voltage of 15V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
PBSS2515M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 420MHz
PBSS2515M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2515M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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