PBSS2515M,315
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- Mfr.Part #
- PBSS2515M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A SOT883
- Stock
- 3,347
- In Stock ：
- 3,347
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 430mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Contact Plating :
- Tin
- Max Collector Current :
- 500mA
- Transistor Type :
- NPN
- Power Dissipation :
- 430mW
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 15V
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Number of Terminations :
- 3
- Frequency :
- 420MHz
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 420MHz
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 15V
- Collector Emitter Voltage (VCEO) :
- 15V
- Collector Base Voltage (VCBO) :
- 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Package / Case :
- SC-101, SOT-883
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Base Part Number :
- PBSS2515
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 420MHz
- Number of Pins :
- 3
- Datasheets
- PBSS2515M,315
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS2515M,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 100mA 2V.When VCE saturation is 250mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 420MHz.This device can take an input voltage of 15V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
PBSS2515M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 420MHz
PBSS2515M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2515M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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