PBSS2515M,315
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- Mfr.Part #
- PBSS2515M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A SOT883
- Stock
- 3,347
- In Stock ：
- 3,347
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 15V
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 3
- Package / Case :
- SC-101, SOT-883
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 15V
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 15V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 420MHz
- Terminal Position :
- BOTTOM
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- PBSS2515
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Frequency :
- 420MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 15V
- Max Power Dissipation :
- 430mW
- Published :
- 2009
- Transition Frequency :
- 420MHz
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 430mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Max Collector Current :
- 500mA
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PBSS2515M,315
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS2515M,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 100mA 2V.When VCE saturation is 250mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 420MHz.This device can take an input voltage of 15V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
PBSS2515M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 420MHz
PBSS2515M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2515M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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