PBSS2515M,315
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- Mfr.Part #
- PBSS2515M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A SOT883
- Stock
- 3,347
- In Stock ：
- 3,347
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 15V
- Collector Emitter Voltage (VCEO) :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Published :
- 2009
- Max Power Dissipation :
- 430mW
- Collector Emitter Breakdown Voltage :
- 15V
- Power Dissipation :
- 430mW
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Base Part Number :
- PBSS2515
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 420MHz
- Mounting Type :
- Surface Mount
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Pin Count :
- 3
- Package / Case :
- SC-101, SOT-883
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Gain Bandwidth Product :
- 420MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Frequency :
- 420MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Max Breakdown Voltage :
- 15V
- Datasheets
- PBSS2515M,315
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS2515M,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 100mA 2V.When VCE saturation is 250mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 420MHz.This device can take an input voltage of 15V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
PBSS2515M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 420MHz
PBSS2515M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2515M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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