PBSS2515M,315
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- Mfr.Part #
- PBSS2515M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A SOT883
- Stock
- 3,347
- In Stock ：
- 3,347
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 430mW
- Element Configuration :
- Single
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- SC-101, SOT-883
- Max Breakdown Voltage :
- 15V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Collector Base Voltage (VCBO) :
- 15V
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 420MHz
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 15V
- Collector Emitter Breakdown Voltage :
- 15V
- Max Power Dissipation :
- 430mW
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Frequency :
- 420MHz
- Radiation Hardening :
- No
- Transition Frequency :
- 420MHz
- Base Part Number :
- PBSS2515
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PBSS2515M,315
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS2515M,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 100mA 2V.When VCE saturation is 250mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 420MHz.This device can take an input voltage of 15V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
PBSS2515M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 420MHz
PBSS2515M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2515M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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