PBSS2515M,315
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- Mfr.Part #
- PBSS2515M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A SOT883
- Stock
- 3,347
- In Stock ：
- 3,347
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 420MHz
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 15V
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 15V
- Collector Emitter Voltage (VCEO) :
- 15V
- Number of Terminations :
- 3
- Frequency :
- 420MHz
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 15V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 430mW
- Terminal Position :
- BOTTOM
- Base Part Number :
- PBSS2515
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Package / Case :
- SC-101, SOT-883
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Transition Frequency :
- 420MHz
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 430mW
- Datasheets
- PBSS2515M,315
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS2515M,315 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 100mA 2V.When VCE saturation is 250mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 420MHz.This device can take an input voltage of 15V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
PBSS2515M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 420MHz
PBSS2515M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2515M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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