PBSS2540M,315
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- Mfr.Part #
- PBSS2540M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.5A SOT883
- Stock
- 18,785
- In Stock ：
- 18,785
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBSS2540
- Number of Elements :
- 1
- Package / Case :
- SC-101, SOT-883
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 430mW
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 40V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 450MHz
- Frequency :
- 450MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 500mA
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 450MHz
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 430mW
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Surface Mount
- Datasheets
- PBSS2540M,315
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS2540M,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 450MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.
PBSS2540M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 450MHz
PBSS2540M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2540M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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