PBSS2540M,315
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- Mfr.Part #
- PBSS2540M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.5A SOT883
- Stock
- 18,785
- In Stock ：
- 18,785
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 430mW
- Frequency :
- 450MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 3
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Base Part Number :
- PBSS2540
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 40V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Max Power Dissipation :
- 430mW
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 450MHz
- Lead Free :
- Lead Free
- Package / Case :
- SC-101, SOT-883
- Gain Bandwidth Product :
- 450MHz
- Mount :
- Surface Mount
- Datasheets
- PBSS2540M,315
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS2540M,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 450MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.
PBSS2540M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 450MHz
PBSS2540M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2540M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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