PBSS2540M,315
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- Mfr.Part #
- PBSS2540M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.5A SOT883
- Stock
- 18,785
- In Stock ：
- 18,785
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 430mW
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 450MHz
- Collector Base Voltage (VCBO) :
- 40V
- Package / Case :
- SC-101, SOT-883
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- Transition Frequency :
- 450MHz
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Frequency :
- 450MHz
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Base Part Number :
- PBSS2540
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Power Dissipation :
- 430mW
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Datasheets
- PBSS2540M,315
PBSS2540M,315 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS2540M,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 450MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.
PBSS2540M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 450MHz
PBSS2540M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2540M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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