PBSS2515MB,315
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- Mfr.Part #
- PBSS2515MB,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS2515MB - SMALL
- Stock
- 30,155
- In Stock ：
- 30,155
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 250mW
- Power Dissipation :
- 590mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 25mV @ 500μA, 10mA
- hFE Min :
- 200
- Package / Case :
- 3-XFDFN
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Frequency :
- 420MHz
- Collector Emitter Voltage (VCEO) :
- 15V
- Published :
- 2012
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 15V
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Max Power Dissipation :
- 590mW
- Base Part Number :
- PBSS2515
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1.1V
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 420MHz
- Collector Emitter Breakdown Voltage :
- 15V
- Factory Lead Time :
- 8 Weeks
- Datasheets
- PBSS2515MB,315
NPN 150°C TJ 100nA ICBO 1 Elements 3-XFDFN Tape & Reel (TR) Surface Mount
PBSS2515MB,315 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 25mV @ 500μA, 10mA.The emitter base voltage can be kept at 6V for high efficiency.The breakdown input voltage is 15V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
PBSS2515MB,315 Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 25mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
PBSS2515MB,315 Applications
There are a lot of Nexperia USA Inc.
PBSS2515MB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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