PBSS2515VS,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

15V

Published :

2009

Transition Frequency :

420MHz

Max Collector Current :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 2V

Terminal Finish :

Tin (Sn)

Length :

6.35mm

Number of Terminations :

6

Transistor Element Material :

SILICON

Max Power Dissipation :

200mW

Mounting Type :

Surface Mount

Base Part Number :

PBSS2515

Power Dissipation :

200mW

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

4 Weeks

Frequency :

420MHz

Terminal Form :

Flat

Operating Temperature :

150°C TJ

Package / Case :

SOT-563, SOT-666

Radiation Hardening :

No

Gain Bandwidth Product :

420MHz

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 500mA

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

15V

Width :

6.35mm

Transistor Type :

2 NPN (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

15V

Max Breakdown Voltage :

15V

Height :

6.35mm

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

6V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Weight :

4.535924g

Number of Elements :

2

Polarity :

NPN