PBSS2515VS,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 2V

Power Dissipation :

200mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

15V

Pin Count :

6

Height :

6.35mm

Package / Case :

SOT-563, SOT-666

Published :

2009

Max Power Dissipation :

200mW

Operating Temperature :

150°C TJ

Weight :

4.535924g

Transistor Type :

2 NPN (Dual)

JESD-609 Code :

e3

Transition Frequency :

420MHz

Lead Free :

Lead Free

Length :

6.35mm

Width :

6.35mm

ECCN Code :

EAR99

Number of Terminations :

6

Frequency :

420MHz

Mount :

Surface Mount

Max Breakdown Voltage :

15V

Number of Pins :

6

Element Configuration :

Dual

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

15V

Emitter Base Voltage (VEBO) :

6V

Factory Lead Time :

4 Weeks

Gain Bandwidth Product :

420MHz

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

500mA

Polarity :

NPN

Collector Base Voltage (VCBO) :

15V

Base Part Number :

PBSS2515

Radiation Hardening :

No