PBSS2515VS,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Form :

Flat

Power Dissipation :

200mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 500mA

Mount :

Surface Mount

Max Breakdown Voltage :

15V

Published :

2009

Polarity :

NPN

Emitter Base Voltage (VEBO) :

6V

Transistor Element Material :

SILICON

Gain Bandwidth Product :

420MHz

Pin Count :

6

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Length :

6.35mm

Weight :

4.535924g

Number of Elements :

2

Element Configuration :

Dual

Max Power Dissipation :

200mW

Max Collector Current :

500mA

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Transition Frequency :

420MHz

Height :

6.35mm

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Application :

SWITCHING

Transistor Type :

2 NPN (Dual)

Frequency :

420MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

PBSS2515

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA 2V

Collector Emitter Voltage (VCEO) :

15V

Package / Case :

SOT-563, SOT-666

Radiation Hardening :

No

Number of Terminations :

6

Collector Base Voltage (VCBO) :

15V

Width :

6.35mm

Number of Pins :

6

Collector Emitter Breakdown Voltage :

15V