PBSS9110Z,135

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Mfr.Part #
PBSS9110Z,135
Manufacturer
Nexperia
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 100V 1A SOT223
Stock
30,499
In Stock :
30,499

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
120V
Max Power Dissipation :
1.4W
Lead Free :
Lead Free
Terminal Position :
Dual
Transistor Type :
PNP
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Transistor Application :
SWITCHING
Package / Case :
TO-261-4, TO-261AA
Factory Lead Time :
4 Weeks
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Max Collector Current :
1A
Emitter Base Voltage (VEBO) :
5V
Case Connection :
COLLECTOR
Transistor Element Material :
SILICON
Frequency :
100MHz
Zener Voltage :
20V
Operating Temperature :
150°C TJ
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
Tolerance :
5%
Terminal Form :
Gull wing
Power Dissipation :
1.4W
Vce Saturation (Max) @ Ib, Ic :
320mV @ 100mA, 1A
Published :
2003
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
100V
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
100nA
Gain Bandwidth Product :
100MHz
Number of Pins :
4
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 500mA 5V
Pin Count :
4
Height :
6.35mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
6.35mm
Mount :
Surface Mount
Length :
12.7mm
Transition Frequency :
100MHz
Number of Terminations :
4
Base Part Number :
PBSS9110
Collector Emitter Voltage (VCEO) :
100V
Weight :
4.535924g
Max Breakdown Voltage :
100V
Polarity/Channel Type :
PNP
Test Current :
5mA
Number of Elements :
1
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS9110Z,135 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Pins:4, Number of Terminations:4, Base Part Number:PBSS9110, PBSS9110Z,135 pinout, PBSS9110Z,135 datasheet PDF, PBSS9110Z,135 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS9110Z,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS9110Z,135


PNP 150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PBSS9110Z,135 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 320mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

PBSS9110Z,135 Features


the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


PBSS9110Z,135 Applications


There are a lot of Nexperia USA Inc.
PBSS9110Z,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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