PBSS9110Y,115
- Mfr.Part #
- PBSS9110Y,115
- Manufacturer
- Nexperia
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A 6TSSOP
- Stock
- 15,058
- In Stock :
- 15,058
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 6
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 100MHz
- Number of Pins :
- 6
- Max Power Dissipation :
- 625mW
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 1A
- Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 100V
- Published :
- 2009
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 120V
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 6
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Base Part Number :
- PBSS9110
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Datasheets
- PBSS9110Y,115

PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
PBSS9110Y,115 Overview
DC current gain in this device equals 150 @ 500mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
PBSS9110Y,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110Y,115 Applications
There are a lot of Nexperia USA Inc.
PBSS9110Y,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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