PBSS9110Y,115
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- Mfr.Part #
- PBSS9110Y,115
- Manufacturer
- Nexperia
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A 6TSSOP
- Stock
- 15,058
- In Stock ：
- 15,058
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 6
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Base Part Number :
- PBSS9110
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Number of Pins :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- Transition Frequency :
- 100MHz
- Pin Count :
- 6
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA
- Power Dissipation :
- 625mW
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 120V
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 625mW
- Datasheets
- PBSS9110Y,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
PBSS9110Y,115 Overview
DC current gain in this device equals 150 @ 500mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
PBSS9110Y,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110Y,115 Applications
There are a lot of Nexperia USA Inc.
PBSS9110Y,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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