PBSS9110Y,115
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- Mfr.Part #
- PBSS9110Y,115
- Manufacturer
- Nexperia
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A 6TSSOP
- Stock
- 15,058
- In Stock ：
- 15,058
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 625mW
- Number of Terminations :
- 6
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- PNP
- Base Part Number :
- PBSS9110
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 100V
- Max Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 120V
- Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Number of Pins :
- 6
- Pin Count :
- 6
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Datasheets
- PBSS9110Y,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
PBSS9110Y,115 Overview
DC current gain in this device equals 150 @ 500mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
PBSS9110Y,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110Y,115 Applications
There are a lot of Nexperia USA Inc.
PBSS9110Y,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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