PBSS9110Y,115
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- Mfr.Part #
- PBSS9110Y,115
- Manufacturer
- Nexperia
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A 6TSSOP
- Stock
- 15,058
- In Stock ：
- 15,058
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Number of Pins :
- 6
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Base Voltage (VCBO) :
- 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e3
- Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Base Part Number :
- PBSS9110
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 6
- Number of Terminations :
- 6
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Datasheets
- PBSS9110Y,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
PBSS9110Y,115 Overview
DC current gain in this device equals 150 @ 500mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
PBSS9110Y,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110Y,115 Applications
There are a lot of Nexperia USA Inc.
PBSS9110Y,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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