PBSS9110X,135
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- Mfr.Part #
- PBSS9110X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT89
- Stock
- 40
- In Stock ：
- 40
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- REACH SVHC :
- No SVHC
- Base Part Number :
- PBSS9110
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 100V
- Power Dissipation :
- 2W
- Number of Elements :
- 1
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Termination :
- SMD/SMT
- Published :
- 2009
- Width :
- 6.35mm
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 120V
- Height :
- 6.35mm
- Length :
- 12.7mm
- Number of Terminations :
- 3
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Max Power Dissipation :
- 2W
- hFE Min :
- 150
- Datasheets
- PBSS9110X,135
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS9110X,135 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 320mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
PBSS9110X,135 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS9110X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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