PBSS9110D,115
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- Mfr.Part #
- PBSS9110D,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A 6TSOP
- Stock
- 1,538
- In Stock ：
- 1,538
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- Base Part Number :
- PBSS9110
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-74, SOT-457
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 100V
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 700mW
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 6
- Number of Pins :
- 6
- Power Dissipation :
- 700mW
- Number of Terminations :
- 6
- Max Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 120V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PBSS9110D,115
PBSS9110D,115 Documents
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS9110D,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 1A volts.
PBSS9110D,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110D,115 Applications
There are a lot of Nexperia USA Inc.
PBSS9110D,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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