PBSS9110D,115
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- Mfr.Part #
- PBSS9110D,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A 6TSOP
- Stock
- 1,538
- In Stock ：
- 1,538
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 120V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Transition Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 700mW
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Pin Count :
- 6
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 1A
- Terminal Position :
- Dual
- Number of Pins :
- 6
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Max Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 700mW
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 6
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Base Part Number :
- PBSS9110
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-74, SOT-457
- Datasheets
- PBSS9110D,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS9110D,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 1A volts.
PBSS9110D,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110D,115 Applications
There are a lot of Nexperia USA Inc.
PBSS9110D,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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