PBSS9110D,115
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- Mfr.Part #
- PBSS9110D,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A 6TSOP
- Stock
- 1,538
- In Stock ：
- 1,538
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 1A
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 700mW
- Collector Emitter Voltage (VCEO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2009
- ECCN Code :
- EAR99
- Number of Pins :
- 6
- Pin Count :
- 6
- Base Part Number :
- PBSS9110
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 120V
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Power Dissipation :
- 700mW
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 6
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-74, SOT-457
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Datasheets
- PBSS9110D,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS9110D,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 1A volts.
PBSS9110D,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110D,115 Applications
There are a lot of Nexperia USA Inc.
PBSS9110D,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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