PBSS9110D,115
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- Mfr.Part #
- PBSS9110D,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A 6TSOP
- Stock
- 1,538
- In Stock ：
- 1,538
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 6
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 120V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 6
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Base Part Number :
- PBSS9110
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 100mA, 1A
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- SC-74, SOT-457
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Pin Count :
- 6
- Collector Emitter Breakdown Voltage :
- 100V
- Mount :
- Surface Mount
- Published :
- 2009
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 700mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 700mW
- Datasheets
- PBSS9110D,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS9110D,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 1A volts.
PBSS9110D,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110D,115 Applications
There are a lot of Nexperia USA Inc.
PBSS9110D,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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