PBSS8110D,115
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- Mfr.Part #
- PBSS8110D,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A 6TSOP
- Stock
- 2,406
- In Stock ：
- 2,406
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Base Part Number :
- PBSS8110
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- Number of Pins :
- 6
- Collector Base Voltage (VCBO) :
- 120V
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 700mW
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Power Dissipation :
- 700mW
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Package / Case :
- SC-74, SOT-457
- Collector Emitter Voltage (VCEO) :
- 100V
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Pin Count :
- 6
- Number of Terminations :
- 6
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- PBSS8110D,115
PBSS8110D,115 Documents
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS8110D,115 Overview
DC current gain in this device equals 150 @ 250mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
PBSS8110D,115 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110D,115 Applications
There are a lot of Nexperia USA Inc.
PBSS8110D,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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