PBSS8110D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

100nA

Transition Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

100V

Max Collector Current :

1A

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Factory Lead Time :

4 Weeks

Frequency :

100MHz

Package / Case :

SC-74, SOT-457

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

100V

Collector Base Voltage (VCBO) :

120V

Radiation Hardening :

No

Transistor Type :

NPN

Mount :

Surface Mount

Gain Bandwidth Product :

100MHz

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

200mV @ 100mA, 1A

Published :

2009

Base Part Number :

PBSS8110

Number of Terminations :

6

Max Power Dissipation :

700mW

Transistor Element Material :

SILICON

Power Dissipation :

700mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 250mA 10V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Number of Pins :

6

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Pin Count :

6

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40