PBSS8110D,115
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- Mfr.Part #
- PBSS8110D,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A 6TSOP
- Stock
- 2,406
- In Stock ：
- 2,406
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 250mA 10V
- Package / Case :
- SC-74, SOT-457
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 100V
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 6
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 6
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 120V
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- PBSS8110
- Max Power Dissipation :
- 700mW
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Frequency :
- 100MHz
- Power Dissipation :
- 700mW
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Pin Count :
- 6
- Datasheets
- PBSS8110D,115
PBSS8110D,115 Documents
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS8110D,115 Overview
DC current gain in this device equals 150 @ 250mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 1A volts.
PBSS8110D,115 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110D,115 Applications
There are a lot of Nexperia USA Inc.
PBSS8110D,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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