PBSS5612PA,115
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- Mfr.Part #
- PBSS5612PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA PBSS5612PA - SMALL SIGN
- Stock
- 14,920
- In Stock ：
- 14,920
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 2.1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 190 @ 2A 2V
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 12V
- Gain Bandwidth Product :
- 60MHz
- Pin Count :
- 3
- Terminal Position :
- Dual
- hFE Min :
- 130
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Published :
- 2010
- Element Configuration :
- Single
- Package / Case :
- 3-PowerUDFN
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- PBSS5612
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -7V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA
- Transition Frequency :
- 60MHz
- Power Dissipation :
- 2.1W
- Frequency :
- 60MHz
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 12V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 6A
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 6A
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 12V
- Factory Lead Time :
- 8 Weeks
- Max Breakdown Voltage :
- 12V
- Transistor Type :
- PNP
- Datasheets
- PBSS5612PA,115
PBSS5612PA,115 Documents
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5612PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 190 @ 2A 2V.When VCE saturation is 300mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 60MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS5612PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 300mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 60MHz
PBSS5612PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5612PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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