PBSS5612PA,115

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Mfr.Part #
PBSS5612PA,115
Manufacturer
NXP Semiconductors
Package / Case
3-PowerUDFN
Datasheet
Download
Description
NEXPERIA PBSS5612PA - SMALL SIGN
Stock
14,920
In Stock :
14,920

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
PNP
Max Power Dissipation :
2.1W
DC Current Gain (hFE) (Min) @ Ic, Vce :
190 @ 2A 2V
Transistor Application :
SWITCHING
Case Connection :
COLLECTOR
Collector Base Voltage (VCBO) :
12V
Gain Bandwidth Product :
60MHz
Pin Count :
3
Terminal Position :
Dual
hFE Min :
130
Mount :
Surface Mount
Terminal Finish :
Tin (Sn)
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Published :
2010
Element Configuration :
Single
Package / Case :
3-PowerUDFN
Packaging :
Tape and Reel (TR)
Operating Temperature :
150°C TJ
Base Part Number :
PBSS5612
Number of Elements :
1
Emitter Base Voltage (VEBO) :
-7V
Mounting Type :
Surface Mount
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
100nA
Transition Frequency :
60MHz
Power Dissipation :
2.1W
Frequency :
60MHz
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
12V
Transistor Element Material :
SILICON
Max Collector Current :
6A
Vce Saturation (Max) @ Ib, Ic :
300mV @ 300mA, 6A
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
12V
Factory Lead Time :
8 Weeks
Max Breakdown Voltage :
12V
Transistor Type :
PNP
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS5612PA,115 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:3-PowerUDFN, Operating Temperature:150°C TJ, Base Part Number:PBSS5612, Mounting Type:Surface Mount, Number of Terminations:3, PBSS5612PA,115 pinout, PBSS5612PA,115 datasheet PDF, PBSS5612PA,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS5612PA,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS5612PA,115


PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount

PBSS5612PA,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 190 @ 2A 2V.When VCE saturation is 300mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 60MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 6A volts can be achieved.

PBSS5612PA,115 Features


the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 300mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 60MHz


PBSS5612PA,115 Applications


There are a lot of Nexperia USA Inc.
PBSS5612PA,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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