PBSS5612PA,115
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- Mfr.Part #
- PBSS5612PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA PBSS5612PA - SMALL SIGN
- Stock
- 14,920
- In Stock ：
- 14,920
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 190 @ 2A 2V
- Pin Count :
- 3
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Frequency :
- 60MHz
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 12V
- Mount :
- Surface Mount
- Base Part Number :
- PBSS5612
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 6A
- Number of Pins :
- 3
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 130
- Emitter Base Voltage (VEBO) :
- -7V
- Gain Bandwidth Product :
- 60MHz
- Transistor Type :
- PNP
- Package / Case :
- 3-PowerUDFN
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 12V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 12V
- Max Breakdown Voltage :
- 12V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Max Collector Current :
- 6A
- Element Configuration :
- Single
- Transition Frequency :
- 60MHz
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2.1W
- Operating Temperature :
- 150°C TJ
- Published :
- 2010
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 2.1W
- Datasheets
- PBSS5612PA,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5612PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 190 @ 2A 2V.When VCE saturation is 300mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 60MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS5612PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 300mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 60MHz
PBSS5612PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5612PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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