PBSS5612PA,115
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- Mfr.Part #
- PBSS5612PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA PBSS5612PA - SMALL SIGN
- Stock
- 14,920
- In Stock ：
- 14,920
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-PowerUDFN
- hFE Min :
- 130
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 12V
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 60MHz
- Emitter Base Voltage (VEBO) :
- -7V
- Power Dissipation :
- 2.1W
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 6A
- Max Breakdown Voltage :
- 12V
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 12V
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2.1W
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 60MHz
- Base Part Number :
- PBSS5612
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 190 @ 2A 2V
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Base Voltage (VCBO) :
- 12V
- Frequency :
- 60MHz
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Published :
- 2010
- Max Collector Current :
- 6A
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PBSS5612PA,115
PBSS5612PA,115 Documents
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5612PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 190 @ 2A 2V.When VCE saturation is 300mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.In the part, the transition frequency is 60MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS5612PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 300mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 60MHz
PBSS5612PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5612PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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