PBSS5580PA,115
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- Mfr.Part #
- PBSS5580PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A 3HUSON
- Stock
- 176,869
- In Stock ：
- 176,869
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBSS5580
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Max Power Dissipation :
- 2.1W
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 110MHz
- hFE Min :
- 70
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Type :
- PNP
- Transition Frequency :
- 110MHz
- Element Configuration :
- Single
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -7V
- Collector Emitter Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Package / Case :
- 3-PowerUDFN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 2A 2V
- Power Dissipation :
- 2.1W
- Max Collector Current :
- 4A
- Vce Saturation (Max) @ Ib, Ic :
- 420mV @ 200mA, 4A
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Max Breakdown Voltage :
- 80V
- Frequency :
- 110MHz
- Published :
- 2010
- Radiation Hardening :
- No
- Datasheets
- PBSS5580PA,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS5580PA,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -7V can result in a high level of efficiency.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 4A volts.
PBSS5580PA,115 Features
the DC current gain for this device is 140 @ 2A 2V
the vce saturation(Max) is 420mV @ 200mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 110MHz
PBSS5580PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5580PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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