PBSS5540X,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

12.7mm

Collector Emitter Breakdown Voltage :

40V

Emitter Base Voltage (VEBO) :

-6V

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

Number of Terminations :

3

Lead Free :

Lead Free

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

40V

Terminal Form :

Flat

Current - Collector Cutoff (Max) :

100nA ICBO

Weight :

4.535924g

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Base Part Number :

PBSS5540

Factory Lead Time :

4 Weeks

Max Power Dissipation :

550mW

Mounting Type :

Surface Mount

Gain Bandwidth Product :

60MHz

Width :

6.35mm

Power - Max :

1.6W

Polarity/Channel Type :

PNP

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Package / Case :

TO-243AA

Max Collector Current :

4A

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Published :

2004

Transistor Element Material :

SILICON

Frequency :

60MHz

Vce Saturation (Max) @ Ib, Ic :

375mV @ 500mA, 5A

JESD-609 Code :

e3

Transition Frequency :

60MHz

Height :

6.35mm

Element Configuration :

Single

Number of Pins :

3

ECCN Code :

EAR99

Mount :

Surface Mount

Max Breakdown Voltage :

40V

Power Dissipation :

2.5W

hFE Min :

250