PBSS5540X,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

4 Weeks

Max Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Element Configuration :

Single

Base Part Number :

PBSS5540

Terminal Form :

Flat

Collector Base Voltage (VCBO) :

40V

Gain Bandwidth Product :

60MHz

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

Transition Frequency :

60MHz

Width :

6.35mm

JESD-609 Code :

e3

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Package / Case :

TO-243AA

Power Dissipation :

2.5W

Max Collector Current :

4A

Published :

2004

Mounting Type :

Surface Mount

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Height :

6.35mm

REACH SVHC :

No SVHC

hFE Min :

250

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

40V

Pin Count :

3

Emitter Base Voltage (VEBO) :

-6V

Max Power Dissipation :

550mW

Lead Free :

Lead Free

Radiation Hardening :

No

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Number of Pins :

3

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Breakdown Voltage :

40V

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

375mV @ 500mA, 5A

Length :

12.7mm

Frequency :

60MHz

Power - Max :

1.6W

Mount :

Surface Mount