PBSS5480X,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

Lead Free :

Lead Free

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

380mV @ 500mA, 5A

Max Breakdown Voltage :

80V

Number of Terminations :

3

Transition Frequency :

125MHz

Power - Max :

1.6W

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Weight :

4.535924g

Collector Emitter Voltage (VCEO) :

80V

Frequency :

125MHz

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Max Collector Current :

4A

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100nA

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2.5W

Transistor Element Material :

SILICON

Pin Count :

3

Package / Case :

TO-243AA

Polarity/Channel Type :

PNP

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Transistor Type :

PNP

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

80V

Number of Elements :

1

Published :

2003

Mounting Type :

Surface Mount

Gain Bandwidth Product :

125MHz

Base Part Number :

PBSS5480

Terminal Form :

Flat

Number of Pins :

3

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

80V

Power Dissipation :

2.5W

Width :

6.35mm

Height :

6.35mm

Length :

12.7mm

Mount :

Surface Mount

Operating Temperature :

150°C TJ