PBSS5350X,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Operating Temperature :

150°C TJ

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Polarity/Channel Type :

PNP

Transistor Element Material :

SILICON

Gain Bandwidth Product :

100MHz

JESD-609 Code :

e3

Max Breakdown Voltage :

50V

Pin Count :

3

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

1.6W

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

Published :

2009

Collector Emitter Voltage (VCEO) :

50V

JESD-30 Code :

R-PSSO-F3

Package / Case :

TO-243AA

Number of Terminations :

3

hFE Min :

200

Factory Lead Time :

4 Weeks

Collector Base Voltage (VCBO) :

50V

Terminal Form :

Flat

Base Part Number :

PBSS5350

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

3A

Max Power Dissipation :

1.6W

Frequency :

100MHz

Number of Elements :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

-5V

Transition Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA

Vce Saturation (Max) @ Ib, Ic :

390mV @ 300mA, 3A