PBSS5350X,135
- Mfr.Part #
- PBSS5350X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A SOT89
- Stock
- 326,673
- In Stock :
- 326,673
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- PBSS5350
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Flat
- Max Power Dissipation :
- 1.6W
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-F3
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 300mA, 3A
- Collector Emitter Voltage (VCEO) :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 1.6W
- hFE Min :
- 200
- Max Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Published :
- 2009
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Datasheets
- PBSS5350X,135
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5350X,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.When VCE saturation is 390mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS5350X,135 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
PBSS5350X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5350X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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