PBSS5350X,115
- Mfr.Part #
- PBSS5350X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A SOT89
- Stock
- 990
- In Stock :
- 990
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Base Part Number :
- PBSS5350
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 1.6W
- Max Collector Current :
- 3A
- Max Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.6W
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Package / Case :
- TO-243AA
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2003
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Terminal Form :
- Flat
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Datasheets
- PBSS5350X,115
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5350X,115 Overview
DC current gain in this device equals 200 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 390mV @ 300mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS5350X,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5350X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5350X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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