PBSS5350X,115
- Mfr.Part #
- PBSS5350X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A SOT89
- Stock
- 990
- In Stock :
- 990
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Number of Terminations :
- 3
- Published :
- 2003
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Form :
- Flat
- Package / Case :
- TO-243AA
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 300mA, 3A
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.6W
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.6W
- Base Part Number :
- PBSS5350
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Max Collector Current :
- 3A
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- PBSS5350X,115
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5350X,115 Overview
DC current gain in this device equals 200 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 390mV @ 300mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS5350X,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5350X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5350X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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