PBSS5350X,115
- Mfr.Part #
- PBSS5350X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A SOT89
- Stock
- 990
- In Stock :
- 990
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 50V
- Max Collector Current :
- 3A
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Package / Case :
- TO-243AA
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 300mA, 3A
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.6W
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Base Part Number :
- PBSS5350
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2003
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.6W
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 50V
- JESD-609 Code :
- e3
- Datasheets
- PBSS5350X,115
PBSS5350X,115 Documents
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5350X,115 Overview
DC current gain in this device equals 200 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 390mV @ 300mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS5350X,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5350X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5350X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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