PBSS5350X,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Max Collector Current :

3A

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.6W

Operating Temperature :

150°C TJ

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

Max Power Dissipation :

1.6W

Frequency :

100MHz

Polarity/Channel Type :

PNP

Package / Case :

TO-243AA

Current - Collector Cutoff (Max) :

100nA

Radiation Hardening :

No

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Gain Bandwidth Product :

100MHz

Mount :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Transistor Type :

PNP

JESD-609 Code :

e3

Number of Terminations :

3

Published :

2003

Vce Saturation (Max) @ Ib, Ic :

390mV @ 300mA, 3A

Base Part Number :

PBSS5350

Transition Frequency :

100MHz

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Collector Base Voltage (VCBO) :

50V