PBSS5350X,115
- Mfr.Part #
- PBSS5350X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A SOT89
- Stock
- 990
- In Stock :
- 990
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Max Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.6W
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 1.6W
- Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Flat
- Gain Bandwidth Product :
- 100MHz
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Published :
- 2003
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 300mA, 3A
- Base Part Number :
- PBSS5350
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- PBSS5350X,115
SOT89.jpg)
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS5350X,115 Overview
DC current gain in this device equals 200 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 390mV @ 300mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS5350X,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5350X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5350X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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