PBSS5350T,215
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- Mfr.Part #
- PBSS5350T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO236AB
- Stock
- 34,036
- In Stock ：
- 34,036
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Current :
- 2A
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 300mW
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Base Part Number :
- PBSS5350
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Power Dissipation :
- 1.2W
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 50V
- Frequency :
- 100MHz
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- PNP
- Published :
- 2002
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 2A
- Packaging :
- Tape and Reel (TR)
- Zener Voltage :
- 6.8V
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 300mA, 3A
- Radiation Hardening :
- No
- Power - Max :
- 540mW
- Collector Base Voltage (VCBO) :
- 50V
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 200
- Datasheets
- PBSS5350T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5350T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 390mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS5350T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5350T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5350T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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