PBSS5350T,215
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- Mfr.Part #
- PBSS5350T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO236AB
- Stock
- 34,036
- In Stock ：
- 34,036
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 300mA, 3A
- Max Collector Current :
- 2A
- Current :
- 2A
- Number of Terminations :
- 3
- Base Part Number :
- PBSS5350
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 50V
- Published :
- 2002
- Number of Pins :
- 3
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Power Dissipation :
- 1.2W
- Zener Voltage :
- 6.8V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 100MHz
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- hFE Min :
- 200
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Power - Max :
- 540mW
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Voltage :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Datasheets
- PBSS5350T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5350T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 390mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS5350T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5350T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5350T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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