PBSS5350T,215
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- Mfr.Part #
- PBSS5350T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO236AB
- Stock
- 34,036
- In Stock ：
- 34,036
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current :
- 2A
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 540mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Zener Voltage :
- 6.8V
- Base Part Number :
- PBSS5350
- Published :
- 2002
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Voltage :
- 50V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- 50V
- Number of Elements :
- 1
- Power Dissipation :
- 1.2W
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 300mA, 3A
- hFE Min :
- 200
- Max Collector Current :
- 2A
- Datasheets
- PBSS5350T,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5350T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 390mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS5350T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5350T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5350T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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