PBSS5350D,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

750mW

Terminal Position :

Dual

Pin Count :

6

Polarity/Channel Type :

PNP

Element Configuration :

Single

Factory Lead Time :

4 Weeks

Base Part Number :

PBSS5350

Max Power Dissipation :

750mW

Voltage :

50V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

300mV @ 200mA, 2A

Transition Frequency :

100MHz

Collector Emitter Breakdown Voltage :

50V

Collector Base Voltage (VCBO) :

60V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Pins :

6

Mounting Type :

Surface Mount

Package / Case :

SC-74, SOT-457

Terminal Form :

Gull wing

Mount :

Surface Mount

Current :

3A

Max Collector Current :

3A

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

PNP

Number of Terminations :

6

Gain Bandwidth Product :

100MHz

Transistor Element Material :

SILICON

Frequency :

100MHz

Emitter Base Voltage (VEBO) :

6V