PBSS5350D,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

6

Terminal Position :

Dual

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Collector Emitter Breakdown Voltage :

50V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Max Power Dissipation :

750mW

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Pin Count :

6

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

PBSS5350

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

PNP

Number of Elements :

1

Collector Base Voltage (VCBO) :

60V

Operating Temperature :

150°C TJ

Element Configuration :

Single

Max Collector Current :

3A

Power Dissipation :

750mW

Number of Pins :

6

Package / Case :

SC-74, SOT-457

Gain Bandwidth Product :

100MHz

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 200mA, 2A

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Current :

3A

Emitter Base Voltage (VEBO) :

6V

Transition Frequency :

100MHz

Published :

2011

Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

100MHz

Polarity/Channel Type :

PNP