PBSS5350D,135
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- Mfr.Part #
- PBSS5350D,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS5350D - SMALL S
- Stock
- 207,589
- In Stock ：
- 207,589
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 750mW
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 50V
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Current :
- 3A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 6
- Base Part Number :
- PBSS5350
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 6
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 6
- Max Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 3A
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Power Dissipation :
- 750mW
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Voltage :
- 50V
- Package / Case :
- SC-74, SOT-457
- Published :
- 2011
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Datasheets
- PBSS5350D,135
PBSS5350D,135 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS5350D,135 Overview
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS5350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS5350D,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5350D,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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