PBSS5350D,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

750mW

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Current :

3A

Transition Frequency :

100MHz

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

50V

Gain Bandwidth Product :

100MHz

Package / Case :

SC-74, SOT-457

Published :

2011

Emitter Base Voltage (VEBO) :

6V

Packaging :

Tape and Reel (TR)

Pin Count :

6

Polarity/Channel Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

PNP

Base Part Number :

PBSS5350

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

60V

Terminal Position :

Dual

ECCN Code :

EAR99

Radiation Hardening :

No

Voltage :

50V

Operating Temperature :

150°C TJ

Number of Pins :

6

Max Collector Current :

3A

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 200mA, 2A

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

750mW

Factory Lead Time :

4 Weeks

Number of Terminations :

6

Frequency :

100MHz

Mount :

Surface Mount