PBSS5350D,125
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- Mfr.Part #
- PBSS5350D,125
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A 6TSOP
- Stock
- 747
- In Stock ：
- 747
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 6
- Power - Max :
- 750mW
- Transistor Type :
- PNP
- Max Power Dissipation :
- 750mW
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 6
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Published :
- 2011
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-74, SOT-457
- Max Collector Current :
- 3A
- Max Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Base Part Number :
- PBSS5350
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Datasheets
- PBSS5350D,125
PNP 150°C TJ 100nA ICBO SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS5350D,125 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.When VCE saturation is 300mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS5350D,125 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
PBSS5350D,125 Applications
There are a lot of Nexperia USA Inc.
PBSS5350D,125 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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