PBSS5350D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Max Breakdown Voltage :

50V

Max Power Dissipation :

750mW

Max Collector Current :

3A

Terminal Finish :

Tin (Sn)

Transistor Type :

PNP

JESD-609 Code :

e3

Polarity/Channel Type :

PNP

Collector Emitter Voltage (VCEO) :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

Width :

6.35mm

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 200mA, 2A

Number of Pins :

6

Package / Case :

SC-74, SOT-457

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Power Dissipation :

750mW

Element Configuration :

Single

Weight :

4.535924g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Published :

2007

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

4 Weeks

Number of Elements :

1

Lead Free :

Lead Free

Terminal Position :

Dual

ECCN Code :

EAR99

Height :

6.35mm

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Collector Base Voltage (VCBO) :

60V

Length :

6.35mm

Gain Bandwidth Product :

100MHz

Frequency :

100MHz

Number of Terminations :

6

Transition Frequency :

100MHz

Base Part Number :

PBSS5350