PBSS5350D,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

PBSS5350

Factory Lead Time :

4 Weeks

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Published :

2007

Operating Temperature :

150°C TJ

Transistor Type :

PNP

Height :

6.35mm

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Width :

6.35mm

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity/Channel Type :

PNP

Gain Bandwidth Product :

100MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 200mA, 2A

Collector Emitter Voltage (VCEO) :

50V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Power Dissipation :

750mW

Number of Pins :

6

Package / Case :

SC-74, SOT-457

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

50V

Max Collector Current :

3A

Length :

6.35mm

Element Configuration :

Single

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transition Frequency :

100MHz

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Max Power Dissipation :

750mW

Emitter Base Voltage (VEBO) :

6V

Frequency :

100MHz

Collector Base Voltage (VCBO) :

60V

Weight :

4.535924g

Terminal Form :

Gull wing