PBSS5350D,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

60V

Mount :

Surface Mount

Package / Case :

SC-74, SOT-457

Height :

6.35mm

Emitter Base Voltage (VEBO) :

6V

Published :

2007

Lead Free :

Lead Free

Max Power Dissipation :

750mW

Transistor Element Material :

SILICON

Gain Bandwidth Product :

100MHz

Weight :

4.535924g

JESD-609 Code :

e3

ECCN Code :

EAR99

Base Part Number :

PBSS5350

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

Frequency :

100MHz

Power Dissipation :

750mW

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Max Collector Current :

3A

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

Terminal Position :

Dual

Transition Frequency :

100MHz

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Width :

6.35mm

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Transistor Type :

PNP

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

300mV @ 200mA, 2A

Length :

6.35mm

Mounting Type :

Surface Mount

Number of Pins :

6

RoHS Status :

ROHS3 Compliant